MGA-30116 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-30116 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1d B gain pression point, achieved through the use of Avago Technologies’ proprietary 0.25um Ga As Enhancement-mode p HEMT process. The adjustable temperature pensated internal bias circuit allowed the device to be operated at either class A or class AB operation The MGA-30116 is housed inside a standard 16 pin QFN 3X3 package. Applications - Class A driver amplifier for GSM/CDMA Base Stations. - General purpose gain block. ponent Image 16 pins QFN 3x3 RFgnd 16 Vg 15 GND 14 NC 13 30116 YYWW XXXX NC 12 VDD/RFout 11 VDD/RFout 10 NC 9 1 Vm GND 2 Vbias 3 RF in 4 NC nc = not connected Features - High linearity and P1d B - Built in adjustable temperature pensated internal bias circuitry - Ga As E-p HEMT Technology [1] - Standard QFN 3X3 package - 5V supply - Excellent uniformity in product specifications - Tape-and-Reel packaging option available - MSL-1 and Lead-free - High MTTF for base station application Specifications 900MHz; 5V, 202.8m A (typical) - 17.0 d B Gain - 44.1 d Bm Output IP3 - 27.7 d Bm Output Power at 1d B gain pression - 47.0% PAE at P1d B - 2.0 d B Noise Figure Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 5 NC 6 NC 7 GND 8 NC TOP VIEW BOTTOM VIEW Notes: Package marking provides orientation and identification “30116” = Device Part Number “YYWW” = Work Week and Year of manufacture “XXXX” = Last 4 digit of Lot number Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 300 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Rating [1] TA=25°C Symbol Parameter Vdd,max Ids,max Vctrl,max Pin,max Pdiss Tj, max TSTG Device Voltage, RF output to ground Device Drain...