MGA-30216 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-30216 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1d B gain pression point, achieved through the use of Avago Technologies’ proprietary 0.25um Ga As Enhancement-mode p HEMT process. The device required simple matching ponents to achieve wide bandwidth performance since it has a built in input prematch. The adjustable temperature pensated internal bias circuit allowed the device to be operated at either class A or class AB operation The MGA-30216 is housed inside a standard 16 pin QFN 3X3 package. Applications - Class A driver amplifier for GSM/PCS/W-CDMA/Wi MAX Base Stations. - General purpose gain block. ponent Image 16 pin QFN 3X3 package RFgnd 16 Vg 15 GND 14 NC 13 Features - High linearity and P1d B - Unconditionally Stable across load condition - Built in adjustable temperature pensated internal bias circuitry - With prematch - required simple matching - Ga As E-p HEMT Technology [1] - Standard QFN 3X3 package - 5V supply - Excellent uniformity in product specifications - Tape-and-Reel packaging option available - MSL-1 and Lead-free - High MTTF for base station application Specifications 2GHz; 5V, 206m A (typ) - 14.2 d B Gain - 45.3 d Bm Output IP3 - 29 d Bm Output Power at 1d B gain pression - 48.9% PAE at P1d B - 2.8 d B Noise Figure 30216 YYWW XXXX NC 12 VDD/RFout 11 VDD/RFout 10 1 Vm 2 Vbias 3 RF in Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. NC 9 4 NC TOP VIEW BOTTOM VIEW Notes: Package marking provides orientation and identification “30216” = Device Part Number “YYWW” = Year and Work Week of manufacture “XXXX” = Last 4 digit of Lot number 5 NC 6 NC 7 GND 8 NC Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 300 V Refer to Avago Application Note...