MGA-30316 Datasheet | Avago Technologies

Description Avago Technologies’ MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1d B gain pression point, achieved through the use of Avago Technologies’ proprietary 0.25um Ga As Enhancement-mode p HEMT process. The device required simple matching ponents to achieve wide bandwidth performance since it has a built in input prematch. The adjustable temperature pensated internal bias circuit allowed the device to be operated at either class A or class AB operation The MGA-30316 is housed inside a standard 16 pin QFN 3X3 package. Applications - Class A driver amplifier for Wi MAX Base Stations. - General purpose gain block. ponent Image 16 pins QFN 3x3 RFgnd 16 NC 15 GND 14 NC 13 30316 YYWW XXXX NC 12 VDD/RFout 11 VDD/RFout 10 NC 9 1 Vm 2 Vbias 3 RF in 4 NC Features - High linearity and P1d B - Unconditionally Stable across load condition - Built in adjustable temperature pensated internal bias circuitry - With prematch - required simple matching - Ga As E-p HEMT Technology [1] - Standard QFN 3X3 package - 5V supply - Excellent uniformity in product specifications - Tape-and-Reel packaging option available - MSL-1 and Lead-free - High MTTF for base station application Specifications 3.5GHz; 5V, 198m A (typ) - 12.8 d B Gain - 44.4 d Bm Output IP3 - 28.5 d Bm Output Power at 1d B gain pression - 51.3% PAE at P1d B - 2.7 d B Noise Figure Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 5 NC 6 NC 7 GND 8 NC TOP VIEW BOTTOM VIEW Notes: Package marking provides orientation and identification “30316” = Device Part Number “YYWW” = Year and Work Week of manufacture “XXXX” = Last 4 digit of Lot number Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 70 V ESD Human Body Model = 250 V Refer to Avago Application Note A004R: Electrostatic...