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AM1010N - 100V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN.

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Datasheet Details

Part number AM1010N
Manufacturer AXElite
File Size 469.84 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet AM1010N Datasheet

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Full PDF Text Transcription (Reference)

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AM1010N 100V N-Channel MOSFET  GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES 1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by: VÛmw`R•yÑb€ w.