GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES
1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by: VÛmw`R●yÑb€ w.goftechm 1/8 AM1010N ORDER/MARKING INFORMATION Order Information Top Marking Logo AM1010N X X Package Type Packing E: SOT223-3L A : Taping ABSOLUTE MAXIMUM RATINGS
Characteristics Drain-Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 70°C) Drain Current – P...
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