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ALD210804 - MOSFET

General Description

The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • precision threshold voltage, which enables circuit designs with input/ output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been suc.

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Datasheet Details

Part number ALD210804
Manufacturer Advanced Linear Devices
File Size 108.67 KB
Description MOSFET
Datasheet download datasheet ALD210804 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210804 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110804 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210804 features precision threshold voltage, which enables circuit designs with input/ output signals referenced to GND at enhanced operating voltage ranges.