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ALD210808 - MOSFET

Download the ALD210808 datasheet PDF. This datasheet also covers the ALD210808A variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • precision threshold voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ALD210808A-AdvancedLinearDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ALD210808
Manufacturer Advanced Linear Devices
File Size 108.90 KB
Description MOSFET
Datasheet download datasheet ALD210808 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210808A/ ALD210808 features precision threshold voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges.