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AP02N60J-H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP02N60J-H datasheet PDF. This datasheet also covers the AP02N60H-H variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J-H) is available for low-profile applications.

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Note: The manufacturer provides a single datasheet file (AP02N60H-H-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.4A Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.