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AP02N60J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP02N60J, a member of the AP02N60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP02N60J) is available for low-profile applications.

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Datasheet preview – AP02N60J

Datasheet Details

Part number AP02N60J
Manufacturer Advanced Power Electronics
File Size 94.27 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N60J Datasheet
Additional preview pages of the AP02N60J datasheet.

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Full PDF Text Transcription

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AP02N60H/J www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 600V 8Ω 1.6A Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1.
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