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AP18N20GP-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP18N20GP-HF datasheet PDF. This datasheet also covers the AP18N20GS-HF variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP18N20GS-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP18N20GP-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18N20GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18N20GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18N20GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18N20GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP18N20GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S BVDSS RDS(ON) ID 200V 170mΩ 18A Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.