Datasheet4U Logo Datasheet4U.com

AP18P10AGH-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP18P10AGH-HF

Datasheet Details

Part number AP18P10AGH-HF
Manufacturer Advanced Power Electronics
File Size 64.26 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP18P10AGH-HF Datasheet
Additional preview pages of the AP18P10AGH-HF datasheet.

📁 Similar Datasheet

  • AP18P02BF - -20V P-Channel Enhancement Mode MOSFET (APM)
  • AP180N03P - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP180N03T - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP18N20F - 200V N-Channel Enhancement Mode MOSFET (APM)
  • AP18N20P - 200V N-Channel Enhancement Mode MOSFET (APM)
  • AP18N20T - 200V N-Channel Enhancement Mode MOSFET (APM)
  • AP100-B10 - AC Current transducer (LEM)
  • AP100-B420L - AC Current transducer (LEM)
  • AP100N02D - 20V N-Channel Enhancement Mode MOSFET (APM)
  • AP100N03BD - 30V N-Channel Enhancement Mode MOSFET (APM)
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP18P10AGH/J-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. BVDSS RDS(ON) ID -100V 140mΩ -12A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10AGJ) is available for low-profile applications.
Published: |