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AP18P10AGJ-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP18P10AGJ-HF, a member of the AP18P10AGH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

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Datasheet preview – AP18P10AGJ-HF

Datasheet Details

Part number AP18P10AGJ-HF
Manufacturer Advanced Power Electronics
File Size 64.26 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP18P10AGH/J-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. BVDSS RDS(ON) ID -100V 140mΩ -12A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10AGJ) is available for low-profile applications.
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