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AP1R803GMT-HF-3 - N-channel Enhancement mode Power MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet preview – AP1R803GMT-HF-3

Datasheet Details

Part number AP1R803GMT-HF-3
Manufacturer Advanced Power Electronics
File Size 94.94 KB
Description N-channel Enhancement mode Power MOSFET
Datasheet download datasheet AP1R803GMT-HF-3 Datasheet
Additional preview pages of the AP1R803GMT-HF-3 datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP1R803GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 1.9mΩ 170A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK® 5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile.
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