Datasheet Details
| Part number | AP1RA03GMT-HF-3 |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.52 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Datasheet | AP1RA03GMT-HF-3-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP1RA03GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 patible with Heatsink Low On-resistance RoHS-pliant, halogen-free G S D BV DSS R DS(ON) ID 30V 1.
| Part number | AP1RA03GMT-HF-3 |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.52 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Datasheet | AP1RA03GMT-HF-3-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is specially designed for DC-DC converter applications, with a foot print that is patible with the popular SO-8 and offers a backside heat sink and lower package profile.
S S D D D D S G PMPAK®5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 185 46 36.7 300 83.3 5 4 Units V V A A A A W W mJ °C °C Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.5 25 Units °C/W °C/W Ordering Information AP1RA03GMT-HF-3TR RoHS-pliant halogen-free PMPAK®5x6, shipped on tape and reel (3000pcs/reel) PMPAK® is a registered trademark of Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
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