Datasheet Details
| Part number | AP2301BGN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.43 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2301BGN-HF-AdvancedPowerElectronics.pdf |
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Overview: AP2301BGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -20V 130mΩ - 2.
| Part number | AP2301BGN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.43 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2301BGN-HF-AdvancedPowerElectronics.pdf |
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SOT-23 G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 +8 -2.8 -2.1 -12 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 200905122 Data and specifications subject to change without notice AP2301BGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-16V, VGS=0V VGS=+8V, VDS=0V ID=-2A VDS=-16V VGS=-4.5V VDS=-10V ID=-1A RG=3.3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP2301 | 1.5A DDR TERMINATION REGULATOR | BCD Semiconductor |
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AP2301 | 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH | Diodes Incorporated |
| ALLPOWER | AP2301 | P-Channel MOSFET | ALLPOWER |
|
AP2301A | 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH | Diodes Incorporated |
 |
AP2301GN | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP2301AGN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301EN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301GN-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301N | P-CHANNEL ENHANCEMENT MODE |
| AP2302AGN-HF | N-channel Enhancement-mode Power MOSFET |
| AP2302AGN-HF-3 | N-channel Enhancement-mode Power MOSFET |