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AP2426GEY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2426GEY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 20V 24mΩ 6.3A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.