Datasheet Details
| Part number | AP2434GN3-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.43 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2434GN3-HF_AdvancedPowerElectronics.pdf |
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Overview: AP2434GN3-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Bottom Exposed DFN ▼ Low On-resistance ▼ Small Size & Lower Profile ▼ RoHS pliant & Halogen-Free DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 18mΩ 10.
| Part number | AP2434GN3-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 154.43 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2434GN3-HF_AdvancedPowerElectronics.pdf |
|
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DFN 3x3 package is well suited for low current DC/DC applications.
G1 D1 G2 S1 S2 D1 D1 D2 D2 D2 D1 .DataSheet.net/ S1 G1 S2 G2 DFN 3x3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 10.5 8.4 30 3.1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Rating 40 Units ℃/W 1 201210042 Data & specifications subject to change without notice Datasheet pdf - http://..co.kr/ AP2434GN3-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=10A VGS=4.5V, ID=6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=10V, ID=11A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=11A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz .DataSheet.net/ o Min.
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