Datasheet4U Logo Datasheet4U.com

AP2451GY - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP2401 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Diodes
AP2401 DUAL LDO REGULATORS BCD Semiconductor
AP2401A 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Diodes
AP2402 DUAL 300mA LDO REGULATORS BCD Semiconductor
AP2402 MOS Shiwei

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2451GY-HF P AND N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2422GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2426GEY N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2428GEY N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2434GN3-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP2451GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package D2 D2 D1 D1 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 S2 G1 S1 20V 37mΩ 5A -20V 75mΩ -3.7A ID P-CH BVDSS RDS(ON) ID 2928-8 Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.