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AP2N7002K Datasheet N-channel MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp.

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all mercial-industrial applications.

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 60 ±20 640 500 950 1.38 0.01 -55 to 150 -55 to 150 Units V V mA mA mA W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

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