AP3310H Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, , low on-resistance and cost-effectiveness. This device is suited for low voltage and battery power applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating - 20 ± 12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.0 110 Unit ℃/W ℃/W Data and specifications subject to change without notice AP3310H/J Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u A Min. Typ. Max. Units -20 -0.5 -0.1 - V V/℃ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1m A RDS(ON) .. Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A 4.4 6 1.5 0.6 25 60 70 60 300 180 60 150 mΩ 250 mΩ -1 -25 V S u A u A n C n C n C ns ns ns ns p F p F p F VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250u A VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.0MHz Gate-Source Leakage Total Gate Charge ±100 n A Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...