AP40G120W Datasheet N-channel Insulated Gate Bipolar Transistor

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp.

Datasheet Details

Part number	AP40G120W
Manufacturer	Advanced Power Electronics Corp
File Size	90.50 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP40G120W-AdvancedPowerElectronics.pdf

▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case fo.

Part Number	Description
AP4002H	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002H-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002H-HF-3	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002I-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002J	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002J-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002J-HF-3	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002S	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002T	N-CHANNEL ENHANCEMENT MODE POWER MOSFET