AP4232BGM-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D2 D2 D1 D1 SO-8 30V 22mΩ 7.6A G2 S2 G1 S1 D1 D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range G1 G2 S1 Rating 30 +20 7.6 6 30 2 -55 to 150 -55 to 150 S2 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and...