AP4232BGM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

30V 22mΩ 7.

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AP4232BGM-HF dual n-channel enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP4232BGM-HF
Manufacturer	Advanced Power Electronics Corp
File Size	89.65 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP4232BGM-HF Datasheet

Full PDF Text Transcription for AP4232BGM-HF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP4232BGM-HF. For precise diagrams, and layout, please refer to the original PDF.

Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product Description Advanc...

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racteristic ▼ Halogen Free & RoHS Compliant Product Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. AP4232BGM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D2 D2 D1 D1 SO-8 30V 22mΩ 7.

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