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AP4232GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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AP4232GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package D1 D2 D1 D2 N-CHANNEL ENHANCEMENT...

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Requirement ▼ Dual N MOSFET Package D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 30V 22mΩ 7.8A SO-8 S1 G1 Description www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 7.8 6.2 30 2 0.

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