AP4232GM datasheet by Advanced Power Electronics Corp.
| Part number | AP4232GM |
|---|---|
| Datasheet | AP4232GM_AdvancedPowerElectronics.pdf |
| File Size | 102.54 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200112051 AP4232GM @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. Drain-Source...
View all Advanced Power Electronics Corp datasheets
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|---|---|
| AP4232BGM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP4224M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226AGM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226D | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4228GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4228GM-HF-3 | Dual N-channel Enhancement-mode Power MOSFET |
