AP4242AYT
AP4242AYT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
S1 G1 S2 G2
PMPAK® 3 x 3
AP4242A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
D1
D2 with an extreme efficient device for use in a wide range of power applications.
G1
G2
The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the
S1
S2 backside heat sink to achieve the good thermal performance.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+20
7.2 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Value 6 50
Unit ℃/W ℃/W
1 202112161
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol...