Download AP4242AYT Datasheet PDF
Advanced Power Electronics Corp
AP4242AYT
AP4242AYT is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description S1 G1 S2 G2 PMPAK® 3 x 3 AP4242A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer D1 D2 with an extreme efficient device for use in a wide range of power applications. G1 G2 The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the S1 S2 backside heat sink to achieve the good thermal performance. Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range +20 7.2 m J -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 6 50 Unit ℃/W ℃/W 1 202112161 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol...