AP4435 - 30 P-Channel Enhancement-Mode MOSFET

Advanced Power Electronics Corp

Datasheet Details

Part number	AP4435
Manufacturer	Advanced Power Electronics Corp
File Size	96.04 KB
Description	30 P-Channel Enhancement-Mode MOSFET
Datasheet	AP4435 Datasheet

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30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID Limit -30 ±20 -7 Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD -50 1.5 0.9 Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1.