Datasheet4U Logo Datasheet4U.com

AP4435A - 30V P-Channel Enhancement Mode MOSFET

General Description

The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -30V ID =-10.5A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number AP4435A
Manufacturer APM
File Size 1.90 MB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4435A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP4435 30 P-Channel Enhancement-Mode MOSFET Advanced Power Electronics
AP4435D ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP4435GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP4435GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP4435GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Other Datasheets by APM

Part Number Description
AP4435B -30V P-Channel Enhancement Mode MOSFET
AP4410A 30V N-Channel Enhancement Mode MOSFET
AP400N08TLG1 85V N-Channel Enhancement Mode MOSFET
AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET
AP40H03DF2 30V N+N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP4435A 30V P-Channel Enhancement Mode MOSFET The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-10.