DESCRIPTION
AP4435A 30V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -30V ID =-10.5A RDS(ON) <16mΩ @ VGS=-10V Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking AP4435A SOP-8 AP4435A XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ PD@TA=70℃ TSTG TJ RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1(t≦ 10s) Thermal Resistance Junction-Case1 Rating -30 ±20 -10.5 -8.6 -50 72.2 -38 3.1 2 -55 to 150 -55 to 150 75 40 24 Qty(PCS) 3000 Units V V A A A mJ A W W ℃ ℃ ℃/W ℃/...
APM
