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AP4435GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP4435GJ, a member of the AP4435GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP4435GJ) is available for low-profile applications.

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Datasheet preview – AP4435GJ

Datasheet Details

Part number AP4435GJ
Manufacturer Advanced Power Electronics
File Size 211.40 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4435GJ Datasheet
Additional preview pages of the AP4435GJ datasheet.

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Full PDF Text Transcription

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AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 20mΩ -40A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4435GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 +20 -40 -25 -150 44.6 0.
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