Datasheet Summary
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Description
-30V P-Channel Enhancement Mode MOSFET
The AP4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -30V ID =-9.3A RDS(ON) <20mΩ @ VGS=-10V （Type：16mΩ）
Application
Lithium battery protection Wireless impact Mobile phone fast charging
Only Use times gsheng Package Marking and Ordering Information n Product ID
Pack
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