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AP4435B - -30V P-Channel Enhancement Mode MOSFET

General Description

The AP4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -30V ID =-9.3A RDS(ON).

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Datasheet Details

Part number AP4435B
Manufacturer APM
File Size 1.50 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4435B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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sales.Mr.wang13826508770 www.sztssd.com Description AP4435B -30V P-Channel Enhancement Mode MOSFET The AP4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-9.