DESCRIPTION
AP4435B -30V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -30V ID =-9.3A RDS(ON) <20mΩ @ VGS=-10V （Type：16mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Only Use times gsheng Package Marking and Ordering Information n Product ID Pack To AP4435B SOP-8L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) r Symbol FoVDS Parameter Drain-Source Voltage Marking AP4435B XXX YYYY Rating -30 VGS Gate-Source Voltage ±20 ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -9.3 ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -7.0 IDM Pulsed Drain Current2 -50 PD@TA=25℃ Total Power Dissipation4 3.1 PD@TA=70℃ Total Power Dissipation4 2 TSTG Storage Temperature Range -55 to 150 TJ RθJA Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1(t≦ 10s) -55 to 150 33.8 RθJC Thermal Resistance Junction-Case1 24 Qty(PCS) 3000 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP4435B RVE1.0 永源微電子科技有限公司 1 sales.Mr.wang13826508770 AP4435B -30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
