AP4435D Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. 50 Unit ℃/W Data and specifications subject to change without notice 201114031 AP4435D @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions Min. Units -1.2 V ns nC Reverse Recovery...