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AP4525GEH-A-HF-3 Datasheet Complementary N And P-channel Enhancement-mode Power MOSFETs

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP4525GEH-A-HF-3 plementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-pliant, halogen-free S1 G1 S2 N-CH D1/D2 BV DSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 40V 26mΩ 8.

General Description

TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The AP4525GEH-A-HF-3 is in a four-lead TO-252 package, which is widely used for mercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives.

S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±16 8.3 6.6 50 3.125 0.025 -55 to 150 -55 to 150 P-channel -40 ±16 -7.0 -5.6 -50 Units V V A A A W W/ °C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 8 40 Unit °C/W °C/W Ordering Information AP4525GEH-A-HF-3TR RoHS-pliant TO-252-4L, shipped on tape and reel (3000 pcs/reel) No longer remended for new designs - use AP4543GEH-HF-3TR ©2010 Advanced Power Electronics Corp.

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