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AP4525GEH-HF-3 Datasheet Complementary N And P-channel Enhancement-mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP4525GEH-HF-3 plementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-pliant,.

General Description

D1/D2 N-CH S1 G1 S2 G2 TO-252-4L P-CH BV DSS R DS(ON) ID BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A Advanced Power MOSFETs from APEC provide the designer with the best D1 D2 bination of fast switching, low on-resistance and cost-effectiveness.

G1 G2 The AP4525GEH-HF-3 is in a four-lead TO-252 package, which is widely used for mercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives.

S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Rating N-channel P-channel 40 -40 ±16 ±16 15.0 -12.0 12.0 -10.0 50 -50 10.4 0.083 -55 to 150 -55 to 150 Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 12 40 Units V V A A A W W/°C °C °C Unit °C/W °C/W Ordering Information AP4525GEH-HF-3TR RoHS-pliant TO-252-4L, shipped on tape and reel (3000 pcs/reel) No longer remended for new designs - use AP4543GEH-HF-3TR ©2010 Advanced Power Electronics Corp.

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