Datasheet4U Logo Datasheet4U.com

AP5321GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP5321 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP5321GM-HF

Datasheet Details

Part number AP5321GM-HF
Manufacturer Advanced Power Electronics
File Size 51.31 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP5321GM-HF Datasheet
Additional preview pages of the AP5321GM-HF datasheet.

📁 Similar Datasheet

  • AP50-B10 - AC Current transducer AP-B10 (LEM)
  • AP50-B420L - AC Current transducer AP-B420L (LEM)
  • AP5002 - PWM CONTROL 2A STEP-DOWN CONVERTER (Diodes Incorporated)
  • AP5004 - PWM CONTROL 2.5A STEP-DOWN CONVERTER (Diodes Incorporated)
  • AP501 - PCS-band 4W HBT Amplifier Module (WJ Communication)
  • AP502 - UMTS-band 4W HBT Amplifier Module (WJ Communication)
  • AP503 - DCS-band 4W HBT Amplifier Module (WJ Communication)
  • AP504 - DCS-band 4W HBT Amplifier Module (ETC)
  • AP5054 - Standalone Linear Li-Ion Battery Charger (Chipown)
  • AP5054ES5 - Standalone Linear Li-Ion Battery Charger (Chipown)
Other Datasheets by Advanced Power Electronics
  • AP5322GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP5331GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP50G60SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP50G60SW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP50G60W-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP50GT60SW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP50L02P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP50L02S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP5321GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D2 D2 D1 D1 ▼ Halogen Free & RoHS Compliant Product SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 100V 150mΩ 2.5A Description AP5321 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Published: |