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AP5322GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP5322 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP5322GM-HF

Datasheet Details

Part number AP5322GM-HF
Manufacturer Advanced Power Electronics
File Size 51.25 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP5322GM-HF Datasheet
Additional preview pages of the AP5322GM-HF datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP5322GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description AP5322 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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