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AP6680CGYT-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP6680C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP6680CGYT-HF
Manufacturer Advanced Power Electronics
File Size 79.67 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP6680CGYT-HF Datasheet
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AP6680CGYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D 30V 9mΩ 15A S Description AP6680C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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