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AP98T06GS-HF-3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP98T06GS-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-pliant, halogen-free G S D BV DSS RDS(ON) ID 60V 5mΩ.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The AP98T06GS-HF-3 is in the TO-263 package, which is widely used for mercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.

G D S TO-263 (S) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating 60 ±20 80 320 250 -55 to 150 -55 to 150 Units V V A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 5 Value 0.5 40 62 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP98T06GS-HF-3TR RoHS-pliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel) ©2010 Advanced Power Electronics Corp.

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