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AP9971GD - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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www.DataSheet4U.com AP9971GD RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 D2 D1 D1 Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package G2 BVDSS RDS(ON) ID 60V 50mΩ 5A PDIP-8 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +25 5 3.2 20 2 0.