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AP9972GS - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9972GS
Manufacturer Advanced Power Electronics
File Size 216.91 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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www.DataSheet4U.com AP9972GS/P RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package G S D BVDSS RDS(ON) ID 60V 18mΩ 60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 60 ±25 60 38 230 89 0.
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