Datasheet4U Logo Datasheet4U.com

AP9997BGJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9997BGJ-HF, a member of the AP9997BGH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

AP9997B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP9997BGJ-HF

Datasheet Details

Part number AP9997BGJ-HF
Manufacturer Advanced Power Electronics
File Size 151.77 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9997BGJ-HF Datasheet
Additional preview pages of the AP9997BGJ-HF datasheet.
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 145mΩ 9.3A S Description AP9997B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
Published: |