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AP9997BGJ-HF Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9997BGJ-HF datasheet PDF. This datasheet also includes the AP9997BGH-HF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9997BGH-HF_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

AP9997B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

Overview

AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 145mΩ 9.