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AP9997GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9997GM
Manufacturer Advanced Power Electronics
File Size 201.91 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9997GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Single Drive Requirement ▼ Surface Mount Package D1 G2 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S2 G1 95V 110mΩ 3A SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial -industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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