Datasheet Details
| Part number | AP9997GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 114.28 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9997GP-HF Download (PDF) |
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| Part number | AP9997GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 114.28 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9997GP-HF Download (PDF) |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 11 7 30 34.7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200812242 Free Datasheet http://www.datasheet4u.com/ AP9997GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=80V, VGS=0V VGS= +20V, VDS=0V ID=10A VDS=80V VGS=10V VDS=50V ID=10A RG=3.3Ω,VGS=10V RD=5Ω VGS=0V VDS=25V f=1.0MHz Min.
AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP9997GH | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
AP9997GK | N-Channel 100V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP9997GP-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |