AP9997GP Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP9997GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial through-hole applications.

Datasheet Details

Part number	AP9997GP
Manufacturer	Advanced Power Electronics
File Size	166.78 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9997GP Datasheet
Additional preview pages of the AP9997GP datasheet.

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Full PDF Text Transcription

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AP9997GP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 120mΩ 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 11 7 30 34.

Published: Oct 26, 2013 |