APL501P
APL501P is N-Channel MOSFET manufactured by Advanced Power Technology.
P-Pack
500V 43.0A 0.12W HERMETIC PACKAGE
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APL501P UNIT Volts Amps
500 43 172 ±30 520 4.16 -55 to 150 and Inductive Current Clamped
Volts Watts W/°C °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS...