APT466FL Datasheet | Advanced Power Technology

ARF466FL ARF466FL RF POWER MOSFETs - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, mercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of .. operation. - Specified 150 Volt, 40.68 MHz Characteristics: - Output Power = 300 Watts. - Gain = 16d B (Class AB) - Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case - Low Cost Flangeless RF Package. - Low Vth thermal coefficient. - Low Thermal Resistance. - Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF466FL UNIT Volts Amps Volts Watts °C/W °C 1000 1000 13 ±30 450 0.30 -55 to 175 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance UNIT Volts 1000 0.90 25 250 ±100 3.3 2 7 9 4 (VGS = 10V, ID = 6.5A) ohms µA n A mhos Volts 2-2006 050-4928 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1m A) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://.advancedpower. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay...