APT5010JFLL Datasheet | Advanced Power Technology

500V 44A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM bines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage ISOTOP ® 2 T- "UL Recognized" - Increased Power Dissipation - Easier To Drive - Popular SOT-227 Package - FAST RECOVERY BODY DIODE All Ratings: TC = 25°C unless otherwise specified. APT5010JFLL UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 500 44 176 ±30 ±40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain...