APT5010JVRU2
500V 44A 0.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
2 T-
"UL Recognized"
ISOTOP®
- Faster Switching
- Lower Leakage
- Single Die MOSFET & FRED
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
- 100% Avalanche Tested
- Popular SOT-227 Package
- PFC "Boost" Configuration
All Ratings: TC = 25°C unless otherwise specified.
APT5010JVRU2 UNIT Volts Amps
500 44 176 ±30 ±40 450 3.6 -55 to 150 300 44 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead...
