The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
APT5010JVFR
500V 44A 0.100Ω
S G D S
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Fast Recovery Body Diode • Lower Leakage • Faster Switching
• 100% Avalanche Tested
FREDFET
D G S
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT5010JVFR UNIT Volts Amps
500 44 176 ±30 ±40 450 3.
APT5010JVFR Datasheet
