APT5010LFLL Datasheet | Advanced Power Technology

APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® bines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. - Lower Input Capacitance - Increased Power Dissipation - Lower Miller Capacitance - Easier To Drive - Lower Gate Charge, Qg - Popular T-MAX™ or TO-264 Package - FAST RECOVERY BODY DIODE T-MAX™ TO-264 LFLL MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT5010B2FLL_LFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 500 Volts 46 Amps ±30 Volts ±40 Total Power Dissipation @ TC = 25°C Linear Derating Factor 520 Watts 4.0 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 50 50 1600 °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test...