APT5010LLC
APT5010B2LC APT5010LLC
500V 47A 0.100W
POWER MOS VITM
B2LC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is
T-MAX™
TO-264 achieved by optimizing the manufacturing process to minimize Ciss and
Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds.
- Identical Specifications: T-MAX™ or TO-264 Package
- Lower Gate Charge & Capacitance
- 100% Avalanche Tested
- Easier To Drive
- Faster switching
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from...
