APT5010LVFR Datasheet | Advanced Power Technology

500V 47A 0.100Ω POWER MOS V ® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. - Fast Recovery Body Diode - Lower Leakage - Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage - 100% Avalanche Tested - Popular TO-264 Package FREDFET All Ratings: TC = 25°C unless otherwise specified. APT5010LVFR UNIT Volts Amps 500 47 188 ±30 ±40 520 4.16 -55 to 150 300 47 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current UNIT Volts Amps 500 47 0.100 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5...