APT50GP60B2DF2 - POWER MOS 7 IGBT

Advanced Power Technology

Datasheet Details

Part number	APT50GP60B2DF2
Manufacturer	Advanced Power Technology
File Size	227.71 KB
Description	POWER MOS 7 IGBT
Datasheet	APT50GP60B2DF2 Datasheet
Additional preview pages of the APT50GP60B2DF2 datasheet.

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www.DataSheet4U.com TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 28A • 100 kHz operation @ 400V, 44A • SSOA rated C E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.

Published: Dec 19, 2006 |