APT50GP60B2DQ2G Datasheet | Advanced Power Technology

.. TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G- APT50GP60B2DQ2(G) 600V - G Denotes Ro HS pliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff - SSOA Rated MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current All Ratings: TC = 25°C unless otherwise specified. APT50GP60B2DQ2(G) UNIT Volts 600 ±30 @ TC = 25°C 150 72 190 190A @ 600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525µA) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 525 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 n A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7495...